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Author(s): Carlos Galup-Montoro
Publisher: World Scientific Publishing
Date : 2007
Pages : 448
Format : PDF



This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.

Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.

Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.



Contents:
The MOS Capacitor
The Long-Channel MOSFET: Theory and dc Equations
The Real MOS Transistor: dc Models
Stored Charges and Capacitive Coefficients
Mismatch Modeling
Noise in MOSFETs
High-Frequency Models
Gate and Bulk Currents
Advanced MOSFET Structures
MOSFET Parameter Extraction
Advanced MOSFET Models for Circuit Simulators


Readership: Advanced undergraduate and graduate courses in device modeling and integrated circuit design; digital, analog and RF circuit designers; and electronics device modeling and characterization engineers.

http://rapidshare.com/files/130361963/M...DELING.rar

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